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Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

机译：电压调制光发射的温度依赖性逆转 alGaInp基多量子阱发光中的负电容设备

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We report a reversal in negative capacitance and voltage modulated lightemission from AlGaInP based multi-quantum well electroluminescent diodes undertemperature variation. Unlike monotonically increasing CW light emission withdecreasing temperature, modulated electroluminescence and negative capacitancefirst increase to a maximum and then decrease while cooling down from roomtemperature. Interdependence of such electronic and optical properties isunderstood as a competition between defect participation in radiativerecombination and field assisted carrier escape from the quantum well regionduring temperature variation. The temperature of maximum light emission mustcoincide with the operating temperature of a device for better efficiency.

机译：我们报告了基于AlGaInP的多量子阱电致发光二极管在温度变化下的负电容和电压调制发光的逆转。与随温度降低单调增加CW发光不同，调制电致发光和负电容首先增加到最大值，然后在从室温冷却下来时减小。这种电子和光学性质的相互依赖性被理解为在辐射复合中缺陷参与和温度变化过程中场辅助载流子从量子阱区域逸出之间的竞争。最大发光温度必须与设备的工作温度一致，以提高效率。

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Bansal, Kanika; Datta, Shouvik;
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年度 2012
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1. Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices [J] . Bansal Kanika, Datta Shouvik Applied Physics Letters . 2013,第5期

机译：基于AlGaInP的多量子阱发光器件中电压调制的发光和负电容的温度相关反转
2. Temperature dependent reversal of voltage modulated light emission and negative capacitance in AIGalnP based multi quantum well light emitting devices [J] . Kanika Bansal, Shouvik Datta Applied Physics Letters . 2013,第5期

机译：基于AIGalnP的多量子阱发光器件中电压调制的光发射和负电容的温度相关反转
3. Voltage modulated electro-luminescence spectroscopy to understand negative capacitance and the role of sub-bandgap states, in light emitting devices [J] . Kanika Bansal, Shouvik Datta Journal of Applied Physics . 2011,第11期

机译：电压调制电致发光光谱法可了解发光器件中的负电容和子带隙状态的作用
4. Radiation Model of Light Emitting Diode Based on Algainp Heterostruc-tures with Multiple Quantum Wells [C] . GRADOBOEV Alexander Vasilievich, ORLOVA Ksenia Nikolaevna International Conference on Prospects of Fundamental Sciences Development . 2014

机译：基于AlgainP异源性的发光二极管的辐射模型，多量子阱
5. Fabrication and characterization of white light emission organic light-emitting devices. [D] . Yang, Han-Jen. 2006

机译：白光发射有机发光器件的制造和表征。
6. Top-emitting quantum dots light-emitting devices employing microcontact printing with electricfield-independent emission [O] . Shihao Liu, Wenbo Liu, Wenyu Ji, -1

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7. Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices [O] . Bansal, Kanika, Datta, Shouvik 2011

机译：电压调制电致发光光谱和阴性电容 - 发光器件中子带隙状态的作用
8. Quantum-Well Charge-Coupled Devices for Charge-Coupled Device-Addressed Multiple-Quantum-Well Spatial Light Modulators [R] . Goodhue, W. D., Burke, B. E., Nichols, K. B., 1986

机译：用于电荷耦合器件的量子阱电荷耦合器件 - 多量子阱空间光调制器

Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

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